MOSFET 60V, 4.5mOhms N-Channel
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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 60 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 120 A | ||
| Resistance Drain-Source RDS (on) : | 6 mOhms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Rail |
| Technical/Catalog Information | NTP5426NG |
| Vendor | ON Semiconductor |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 60V |
| Current - Continuous Drain (Id) @ 25° C | 120A |
| Rds On (Max) @ Id, Vgs | 6 mOhm @ 60A, 10V |
| Input Capacitance (Ciss) @ Vds | 5800pF @ 25V |
| Power - Max | 215W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 170nC @ 10V |
| Package / Case | TO-220AB |
| FET Feature | Standard |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTP5426NG NTP5426NG |