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NTP60N06G

MOSFET 60V 60A N-Channel

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SeekIC No. : 00161113 Detail

NTP60N06G: MOSFET 60V 60A N-Channel

NTP60N06G Data Sheet

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Part Number:
NTP60N06G
Mfg:
ON Semiconductor
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 60 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 14 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 60 V
Continuous Drain Current : 60 A
Resistance Drain-Source RDS (on) : 14 mOhms


Parameters:

Technical/Catalog InformationNTP60N06G
VendorON Semiconductor
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)60V
Current - Continuous Drain (Id) @ 25° C60A
Rds On (Max) @ Id, Vgs14 mOhm @ 30A, 10V
Input Capacitance (Ciss) @ Vds 3220pF @ 25V
Power - Max2.4W
PackagingTube
Gate Charge (Qg) @ Vgs81nC @ 10V
Package / CaseTO-220-3 (Straight Leads)
FET FeatureStandard
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTP60N06G
NTP60N06G
NTP60N06GOS ND
NTP60N06GOSND
NTP60N06GOS



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