NTP90N02

MOSFET 24V 90A N-Channel

product image

NTP90N02 Picture
SeekIC No. : 00164625 Detail

NTP90N02: MOSFET 24V 90A N-Channel

floor Price/Ceiling Price

Part Number:
NTP90N02
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/9

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 24 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 90 A
Resistance Drain-Source RDS (on) : 5.8 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : Through Hole
Continuous Drain Current : 90 A
Maximum Operating Temperature : + 150 C
Packaging : Tube
Package / Case : TO-220AB
Resistance Drain-Source RDS (on) : 5.8 mOhms
Drain-Source Breakdown Voltage : 24 V


Features:

• Pb−Free Packages are Available


Application

• Power Supplies
• Converters
• Power Motor Controls
• Bridge Circuits



Pinout

  Connection Diagram


Specifications

Rating Symbol Value Unit
Drain−to−Source Voltage VDSS 24 Vdc
Gate−to−Source Voltage
− Continuous
VGS +20 Vdc
Drain Current
− Continuous @ TA = 25°C
− Single Pulse (tp = 10 s)
ID
IDM
90
200
A
A
Total Power Dissipation @ TA = 25°C
Derate above 25°C
PD 85
0.66
W
W/°C
Operating and Storage Temperature TJ, Tstg −55 to +150 °C
Single Pulse Drain−to−Source Avalanche
Energy − Starting TJ = 25°C
(VDD = 28 Vdc, VGS = 10 Vdc,
L = 5.0 mH, IL(pk) = 17 A, RG = 25 )
EAS 733 mJ
Thermal Resistance
Junction−to−Case
Junction−to−Ambient (Note 1)
RJC
RJA
1.55
70
°C/W
Maximum Lead Temperature for Soldering
Purposes, 1/8, from case for 10 seconds
TL 260 °C
1. When surface mounted to an FR4 board using 1, pad size, (Cu Area 1.127 in2).
2. When surface mounted to an FR4 board using minimum recommended pad
size, (Cu Area 0.412 in2).
*Chip current capability limited by package.



Description

 NTP90N02 Designed for low voltage, high speed switching applications in power supplies, converters and power motor controls and bridge circuits.




Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Cable Assemblies
Hardware, Fasteners, Accessories
Prototyping Products
DE1
Line Protection, Backups
Batteries, Chargers, Holders
Resistors
View more