NTR1P02LT1

Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Package / Case : SOT-23
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 12 V
Continuous Drain Current : 1.3 A
Resistance Drain-Source RDS (on) : 220 mOhms at 4.5 V


Features:

• Low RDS(on) Provides Higher Efficiency and Extends Battery Life
• Miniature SOT−23 Surface Mount Package Saves Board Space
• Pb−Free Package is Available


Pinout




Specifications

Rating	Symbol	Value	Unit
DraintoSource Voltage	VDSS	-20	Vdc
GatetoSource Voltage− Continuous	VGS	±12	Vdc
Drain Current − Continuous @ TA = 25°C − Pulsed Drain Current (tp 3 10 s)	ID IDM	−1.3 −4.0	A A
Operating and Storage Temperature Range	TJ, Tstg	55 to 150	°C
Total Power Dissipation @ TA= 25°C (Note 2)	Pd	400	mW
Thermal Resistance Junction to Ambient	RJA	300	°C/W
Maximum Lead Temperature for Soldering Purposes, 1/8, from case for 10 s.	TL	260	°C

Maximum ratings are those values beyond which device damage can occur.
Maximum ratings applied to the device are individual stress limit values (not
normal operating conditions) and are not valid simultaneously. If these limits
are exceeded, device functional operation is not implied, damage may occur
and reliability may be affected.


Description

These miniature surface mount MOSFETs low RDS(on) NTR1P02LT1 assure minimal power loss and conserve energy, making these devices ideal for use in space sensitive power management circuitry. Typical applications of NTR1P02LT1 are dc−dc converters and power management in portable and battery−powered products such as computers, printers, PCMCIA cards, cellular and cordless telephones.