MOSFET -8V 3.7A P-Channel
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 8 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 3.7 A | ||
| Resistance Drain-Source RDS (on) : | 52 mOhms at 4.5 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-23 | Packaging : | Reel |
| Technical/Catalog Information | NTR2101PT1G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25° C | 3.7A |
| Rds On (Max) @ Id, Vgs | 52 mOhm @ 3.5A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 1173pF @ 4V |
| Power - Max | 960mW |
| Packaging | Cut Tape (CT) |
| Gate Charge (Qg) @ Vgs | 15nC @ 4.5V |
| Package / Case | SOT-23-3, TO-236-3, Micro3?, SSD3, SST3 |
| FET Feature | Logic Level Gate |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTR2101PT1G NTR2101PT1G NTR2101PT1GOSCT ND NTR2101PT1GOSCTND NTR2101PT1GOSCT |