MOSFET -8V -1.4A P-Channel
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 8 V | ||
| Gate-Source Breakdown Voltage : | +/- 8 V | Continuous Drain Current : | 1.4 A | ||
| Resistance Drain-Source RDS (on) : | 100 mOhms at 4.5 V | Configuration : | Single | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SC-70 | Packaging : | Reel |
| Technical/Catalog Information | NTS2101PT1G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | P-Channel |
| Drain to Source Voltage (Vdss) | 8V |
| Current - Continuous Drain (Id) @ 25° C | 1.4A |
| Rds On (Max) @ Id, Vgs | 100 mOhm @ 1A, 4.5V |
| Input Capacitance (Ciss) @ Vds | 640pF @ 8V |
| Power - Max | 290mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 6.4nC @ 5V |
| Package / Case | SC-70-3, SOT-323-3 |
| FET Feature | Logic Level Gate |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTS2101PT1G NTS2101PT1G NTS2101PT1GOSDKR ND NTS2101PT1GOSDKRND NTS2101PT1GOSDKR |