MOSFET -20V -430mA Dual P-Channel
NTZD3152PT1G: MOSFET -20V -430mA Dual P-Channel
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| Transistor Polarity : | P-Channel | Drain-Source Breakdown Voltage : | 20 V | ||
| Gate-Source Breakdown Voltage : | +/- 6 V | Continuous Drain Current : | 0.43 A | ||
| Resistance Drain-Source RDS (on) : | 900 mOhms at 4.5 V | Configuration : | Dual | ||
| Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
| Package / Case : | SOT-563 | Packaging : | Reel |
| Technical/Catalog Information | NTZD3152PT1G |
| Vendor | ON Semiconductor (VA) |
| Category | Discrete Semiconductor Products |
| Mounting Type | Surface Mount |
| FET Polarity | 2 P-Channel (Dual) |
| Drain to Source Voltage (Vdss) | 20V |
| Current - Continuous Drain (Id) @ 25° C | 430mA |
| Rds On (Max) @ Id, Vgs | 900 mOhm @ 430mA, 4.5V |
| Input Capacitance (Ciss) @ Vds | 175pF @ 16V |
| Power - Max | 250mW |
| Packaging | Digi-Reel? |
| Gate Charge (Qg) @ Vgs | 2.5nC @ 4.5V |
| Package / Case | SOT-563 |
| FET Feature | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | NTZD3152PT1G NTZD3152PT1G NTZD3152PT1GOSDKR ND NTZD3152PT1GOSDKRND NTZD3152PT1GOSDKR |