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NTZS3151PT1G

MOSFET -20V -950mA P-Channel

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SeekIC No. : 00145845 Detail

NTZS3151PT1G: MOSFET -20V -950mA P-Channel

NTZS3151PT1G Data Sheet

floor Price/Ceiling Price

US $ .09~.26 / Piece | Get Latest Price
Part Number:
NTZS3151PT1G
Mfg:
ON Semiconductor
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~500
  • Unit Price
  • $.26
  • $.17
  • $.14
  • $.09
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/5

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Product Details

Quick Details

Transistor Polarity : P-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V Continuous Drain Current : 0.86 A
Resistance Drain-Source RDS (on) : 150 mOhms at 4.5 V Configuration : Single Quad Drain
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-563 Packaging : Reel    

Description

Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : P-Channel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 8 V
Configuration : Single Quad Drain
Package / Case : SOT-563
Continuous Drain Current : 0.86 A
Resistance Drain-Source RDS (on) : 150 mOhms at 4.5 V


Parameters:

Technical/Catalog InformationNTZS3151PT1G
VendorON Semiconductor (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityP-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C860mA
Rds On (Max) @ Id, Vgs150 mOhm @ 950mA, 4.5V
Input Capacitance (Ciss) @ Vds 458pF @ 16V
Power - Max170mW
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs5.6nC @ 4.5V
Package / CaseSOT-563
FET FeatureLogic Level Gate
Drawing Number*
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names NTZS3151PT1G
NTZS3151PT1G
NTZS3151PT1GOSCT ND
NTZS3151PT1GOSCTND
NTZS3151PT1GOSCT



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