OMR7915NH

Features: • Isolated & Non-Isolated Hermetic Packages• Output Voltages: -5V, -12V, -15V (Other Voltages Available)• Output Voltages Set Internally To ±1% or ±2%• Built-In Thermal Overload Protection• Short Circuit Current Limiting• Radiation Tolerant up to 4...

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OMR7915NH Picture
SeekIC No. : 004437763 Detail

OMR7915NH: Features: • Isolated & Non-Isolated Hermetic Packages• Output Voltages: -5V, -12V, -15V (Other Voltages Available)• Output Voltages Set Internally To ±1% or ±2%• Built-In...

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Part Number:
OMR7915NH
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Isolated & Non-Isolated Hermetic Packages
• Output Voltages: -5V, -12V, -15V (Other Voltages Available)
• Output Voltages Set Internally To ±1% or ±2%
• Built-In Thermal Overload Protection
• Short Circuit Current Limiting
• Radiation Tolerant up to 450 K Rad (Si)
• Available Hi-Rel Screened, Class B and Class S, MIL-STD-883



Specifications

Input Voltage . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -35 V
Operating Junction Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . - 55°C to + 150°C
Storage Temperature Range. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  - 65°C to + 150°C
Power Dissipation: TO-205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .1.1 W
TO-257/SMD/ D2 Pac . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 20 W
Lead Temperature (Soldering 10 seconds) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  300°C
Surface Mount Package Soldering Temperature . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .250°C
Thermal Resistance, Junction to Case:
TO-205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  17°C/W
TO-257(Isolated), D2 Pac (Isolated) . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .      4.2°C/W
SMD-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  3.5°C/W
Thermal Resistance, (Junction Ambient):
TO-205 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 90°C/W
TO-257(Isolated), D2 Pac (Isolated) SMD-1 . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  42°C/W
Maximum Output Current: TO-205. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 0.5 A
Case-All Others . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  3.3A
Radiation Tolerant - Total Dose . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . .  300 K Rad (Si)




Description

These three terminal negative regulators OMR7915NH are supplied in a high density hermetically sealed metal package and are available hi-rel screened. All pro-tective features are designed into the circuit, including thermal shutdown, current limiting and safe-area control. With heat sinking, they can deliver over 1.5 amps of output current. These units OMR7915NH feature internally trimmed output voltages to ±1% or 2% of nominal voltage. Standard voltages are -5V, -12V, and -15V. However, other voltages are available up to -24 volts. These devices OMR7915NH are ideally suited for Space applications where small size, high reliability, and radiation tolerance is required. The high level of Radiation Tolerance of these devices makes them a desirable choice for LEO a-nd many MEO and GEO communication satellites. Radiation testing is performed on a single wafer by wafer basis. Random die samples per wafer are selected, packaged and radiation tested to qualify each individual semiconductor wafer-by-wafer.


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