ON2152

The ON2152 is the same with CNZ2152 which is a photosensor detecting the change of reflective light in which a high efficiency GaAs infrared light emitting diode is used as the light emitting element, and a high sensitivity Si phototransistor is used as the light detecting element. The two elements are located parallel in the same direction and objects are detected when passing in front of the device. It can be applited in detection of paper, film and cloth, optical mark reading, detection of coin and bill, detection of position and edge, start, end mark detection of magnetic tape.

The features of ON2152 can be summarized as (1)fast response; (2)high sensitivity; (3)high SN ratio.

The absolute maximum ratings of ON2152 are (1)input (light emitting diode) reverse voltage VR: 3 V/forward current IF: 100 mA/power dissipation *1( input power derating ratio is 2.0 mW/°C at T a 25°C.) PD: 150 mW; (2)output (photo transistor) collector-emitter voltage(base open) VCEO: 20 V/emitter-collector voltage(base open) VECO: 3 V/collector current IC: 30 mA; (3)Collector power dissipation *2( output power derating ratio is 2.0 mW/°C at T a 25°C) PC: 150 mW; (4)temperature operating ambient temperature Topr: -25 to +85 °C/storage temperature T stg: -30 to +100 °C.