OP132

The OP132 is high intensity gallium arsenide infrared emitting diode mounted in hermetic TO-46 housings.

Features of the OP132 are:(1)TO-46 hermetically sealed package;(2)mechanically and spectrally matched to the OP800 and OP593 phototransistors or OP830 photodralingtons;(3)variety of power ranges;(4)enhanced temperature range.

The absolute maximum ratings of the OP132 can be summarized as:(1)reverse voltage:2.0V;(2)continuous forward current:100mA;(3)peak forward current(2us pulse width,0.1% duty cycle):10.0A;(4)storage temperature range:-65 to +150;(5)operating temperature range:-65 to +125;(6)lead soldering temperature{1/16 inch (1.6mm) from case for 5sec. with soldering iron}:260;(7)power dissipation:200mW.

The electrical characteristics of the OP132 are:(1)radiant power output:4.0mW;(2)forward voltage:1.75V;(3)reverse current:100uA;(4)wavelength at peak emission:935nm;(5)spectral bandwidth between half power points:50nm;(6)spectral shift with temperature:+0.30nm/;(7)emission angle at half power points:18deg.;(8)output rise time:1000ns;(9)output fall time:500ns.

If you want to know more information such as the electrical characteristics about the OP132, please download the datasheet in www.seekic.com or www.chinaicmart.com .