OP240SL

The OP240SL consists of gallium alumimum arsenide infrared emitting diodes mounted in low cost, clear plastic side-looking packages. The features of OP240SL are: (1)Up to 2.5 times the radiant intensity of the GaAs equivalent at the same drive current; (2)select to specific on-line intensity and radiant intensity ranges; (3)mechanically and spectrally matched to the OP550 and OP560 series phototransistors.

The following is about the absolute maximum ratings of OP240SL: (1)reverse voltage: 2.0V; (2)continous forward current: 50mA; (3)peak forward current (1s pulse width, 300 pps): 3.0A; (4)Storage Temperature Range: 40°C to +100°C; (5)Operating Temperature Range: 40°C to +100°C; (6)Lead Soldering Temperature: 240°C; (7)power dissipation: 100mW.

The electrical characteristics of the OP240SL are: (1)apertured radiant incidence: 0.60 mW/cm2 at IF=20mA; (2)forward voltage: 1.80V max at IF=20mA; (3)reverse current: 100A at VR=2.0V; (4)wavelength at peak eission: 890nm at IF=10mA; (5)spectral bandwidth between half power points: 80nm at IF=10mA; (6)spectral shift with temperature: +0.18nm/ at IF=constant; (7)emission angle at half power points: 40 Deg. at IF=20mA; (8)output rise time: 550ns at IF(PK)=100mA; (9)output fall time: 225ns at IF(PK)=100mA, PW=10s, D.C.=10.0%.