OP803

Stor age Tem per a ture Range ....................-65 to +150
Op er ating Tem per a ture Range  .................. -55 to +125
Lead Sol dering Tem per a ture
[1/16 inch (1.6 mm) from case for 5 sec. with sol der ingiron] ........ 240(1)
Col lec tor-Emitter Volt age............................ 30 V
Col lec tor-Base Volt age .............................30 V
Emit ter-Base Volt age.............................. 5.0 V
Emit ter-Collector Volt age............................ 5.0 V
Power Dis si pa tion ............................ 250 mW⁽²⁾

Notes:
(1) RMA flux is recommended. Duration can be extended to 10 sec. max. when flow soldering.
(2) Derate linearly 2.5 mW/ above 25.

Each device in the OP803, OP804 and OP805TX/TXV series consists of a high  reliability NPN phototransistor mounted in a lensed, hermetically sealed, TO-18  package. All devices are 100% screened per Table II of MIL-PRF-19500. Typical screening and lot acceptance tests are provided on page 13-4.

The OP803, OP804 and OP805 TX/TXV series lensing creates an acceptance half angle of 12o<D> measured from the optical axis to the half power point. The series can be matched with either a solid state infrared source, such as the OP235 and OP236 TX/TXV series IREDs, or can be used to sense infrared content in a visible light source, such as a tungsten bulb or sunlight for automatic brightness control.