OSD1-0

The OSD1-0 is designed as silicon photodiodes are designed to operate with a reverse bias voltage of up to 30 volts for applications where low capacitance or fast speed of response are important. These photodiodes OSD1-0 are fabricated to maximize their responsivity in the 780-930nm range. The typical responsivity at 900nm is 0.54A/W. For pulsed applications, the devices exhibit good performace throughout the 430nm to 1064nm spectral range.

Some absolute maximum ratings of OSD1-0 have been concluded into several points as follow. The first one is about its DC reverse voltage which would be 50V. The next one is about its storage temperature range which would be from -45°C to +100°C. The next one is about its operating temperature range which would be from -25°C to +75°C. That are all the main ratings.

Also there are some electrical specifications of OSD1-0 (measured at 22°C ambient and a reverse bias of 30V unless otherwise stated) having been concluded into several points as follow. The first one is about its active area which would be 1mm2 and 1.13mm dia. The next one is about its dark current which would be max 3nA and typ 1nA. The next one is about its NEP WHz-1/2 =900nm which would be typ 4.5 X 10^-14. The next one is about its capacitance which would be typ 12pF at Vr=0V and would be max 3pF at Vr=30V. The next one is about its risetime at =900nm and RL=50 which would be typ 10ns. The next one is about its package which would be 4. And so on.

At present we have not got so much information about OSD1-0. And we would try hard to get more information about it. If you have any question or suggestion or want to know more information about it please contact us for details and we would be glad to serve you.