P1001

Features: ·High Linearity Wideband Amplifier·On-Chip Temperature Compensated Output Power Detector·Balanced Design Provides Good Input/Output Match·11.0 dB Small Signal Gain·+31.0 dBm Third Order Intercept (OIP3)·100% On-Wafer RF, DC and Output Power Testing·100% Visual Inspection to MIL-STD-883 M...

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SeekIC No. : 004438949 Detail

P1001: Features: ·High Linearity Wideband Amplifier·On-Chip Temperature Compensated Output Power Detector·Balanced Design Provides Good Input/Output Match·11.0 dB Small Signal Gain·+31.0 dBm Third Order In...

floor Price/Ceiling Price

Part Number:
P1001
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Description



Features:

·High Linearity Wideband Amplifier
·On-Chip Temperature Compensated Output Power Detector
·Balanced Design Provides Good Input/Output Match
·11.0 dB Small Signal Gain
·+31.0 dBm Third Order Intercept (OIP3)
·100% On-Wafer RF, DC and Output Power Testing
·100% Visual Inspection to MIL-STD-883 Method 2010



Specifications

Supply Voltage (Vd) +6.0 Vdc
Supply Current (Id) 700 mA
Gate Bias Voltage (Vg) +0.3 Vdc
Input Power (Pin) +14.0 dBm
Storage Temperature (Tstg) -65 to +165
Operating Temperature (Ta) -55 to MTTF Table4
Channel Temperature (Tch) MTTF Table4
(4) Channel temperature affects a device's MTTF. It is recommended to keep channel temperature as low as possible for maximum life.


Description

Mimix Broadband's two stage 26.0-40.0 GHz GaAs MMIC power amplifier P1001 is optimized for linear operation with a third
order intercept point of +31.0 dBm. The device also includes Lange couplers to achieve good input/output return loss and an on-chip temperature compensated output power detector. This MMIC of P1001 uses Mimix Broadband's 0.15 m GaAs PHEMT device model technology, and is based upon electron beam lithography to ensure high repeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1001 is well suited for Millimeter-wave Point-to-Point Radio, LMDS, SATCOM and VSAT applications.




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