P1006

Mimix Broadband!s three stage 8.5-11.0 GHz GaAs MMIC power amplifier P1006 has a large signal gain of 21.0 dB with a +40.0 dBm saturated output power and also includes on-chip gate bias circuitry. This MMIC of P1006 uses Mimix Broadband!s 0.5   m GaAs PHEMT device model technology, and is based upon optical gate lithography to ensure high epeatability and uniformity. The chip has surface passivation to protect and provide a rugged part with backside via holes and gold metallization to allow either a conductive epoxy or eutectic solder die attach process. This P1006 is well suited for radar applications.