P2N2907A

Configuration : Single
Maximum Operating Temperature : + 150 C
Transistor Polarity : PNP
Mounting Style : Through Hole
Collector- Emitter Voltage VCEO Max : 60 V
Emitter- Base Voltage VEBO : 5 V
Package / Case : TO-92
Packaging : Bulk
Maximum DC Collector Current : 0.6 A
DC Collector/Base Gain hfe Min : 75 at 0.1 mA at 10 V
Maximum Operating Frequency : 200 MHz (Min)


Specifications

Rating	Symbol	Value	Unit
CollectorEmitter Voltage	VCEO	-60	Vdc
CollectorBase Voltage	VCBO	-60	Vdc
EmitterBase Voltage	VEBO	5.0	Vdc
Collector Current - Continuous	IC	-600	mAdc
Total Device Dissipation @ TA = 25°C Derate above 25°C	PD	625 5.0	mW mW/°C
Total Device Dissipation @ TC = 25°C Derate above 25°C	PD	1.5 12	Watts mW/°C
Operating and Storage Junction Temperature Range	TJ, Tstg	55 to +150	°C

Parameters:

Technical/Catalog Information	P2N2907A
Vendor	ON Semiconductor
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	60V
Current - Collector (Ic) (Max)	600mA
Power - Max	625mW
DC Current Gain (hFE) (Min) @ Ic, Vce	100 @ 1mA, 10V
Vce Saturation (Max) @ Ib, Ic	400mV @ 15mA, 150mA
Frequency - Transition	200MHz
Current - Collector Cutoff (Max)	10nA
Mounting Type	Through Hole
Package / Case	TO-92-3, TO-226AA (Straight Leads)
Packaging	Bulk
Drawing Number	*
Lead Free Status	Contains Lead
RoHS Status	RoHS Non-Compliant
Other Names	P2N2907A P2N2907A