PBL40310

Features: • 2.7 to 5.0 V single supply operation• 35 dBm output power at 3.5 V• 55 % Power Added Efficiency• Input matched to 50 • Complete on chip input and interstage matching• Analog power control• Less than 10 mA current consumption in power down mode&...

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PBL40310 Picture
SeekIC No. : 004455581 Detail

PBL40310: Features: • 2.7 to 5.0 V single supply operation• 35 dBm output power at 3.5 V• 55 % Power Added Efficiency• Input matched to 50 • Complete on chip input and interstage...

floor Price/Ceiling Price

Part Number:
PBL40310
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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268 Transactions

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Upload time: 2024/4/17

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Product Details

Description



Features:

• 2.7 to 5.0 V single supply operation
• 35 dBm output power at 3.5 V
• 55 % Power Added Efficiency
• Input matched to 50
• Complete on chip input and interstage matching
• Analog power control
• Less than 10 mA current consumption in power down mode
• Proven RF Silicon Technology Reliability
• Minimum number of external components for low overall solution cost



Pinout

  Connection Diagram


Specifications

Parameter
Conditions
Symbol
Min.
Typ.
Max.
Unit
Supply voltage, continuous  
VCC
-0.5
6.0
V
Power control voltage  
VAPC
-0.5
6.0
V
Input power  
PIN
+20
dBm
Operating Case Temperature  
TOP
-40
+85
Storage Temperature Range  
TSTORAGE
-30
+100



Description

The PBL 40310 is a highly integrated single-ended silicon MMIC power amplifier intended for use in GSM terminals. It delivers 35 dBm at 900 MHz with 55 % power added efficiency into a 50 unbalanced load using a single 3.5 V supply.

The circuit PBL40310 has an analog ramp signal to control output power level and a logical on/ off signal for power down mode. PBL40310 can be used in dual-band amplifiers using the band select logical signal. It can be operated up to 50 % duty cycle with minimum performance degradation. The circuit PBL40310 is housed in a specially designed QSOP16 (150 mil body) package and the implementation requires only few external components.

25 GHz ft state-of-the-art deep trench isolated double-poly silicon bipolar process with additional features for improved wireless performance has been used. On-chip capacitors PBL40310 and inductors are used for the integrated internal matching network. Special front-side of PBL40310 metallized substrate contacts provide excellent ground paths from active devices to the highly doped semiconductor substrate and package ground.




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