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PBSS3515VS

Features: · 300 mW total power dissipation· Very small 1.6 x 1.2 mm ultra thin package· Self alignment during soldering due to straight leads· Low collector-emitter saturation voltage· High current capability· Improved thermal behaviour due to flat leads· Replaces two SC75/SC89 packaged low VCEsat...

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SeekIC No. : 004455627 Detail

PBSS3515VS: Features: · 300 mW total power dissipation· Very small 1.6 x 1.2 mm ultra thin package· Self alignment during soldering due to straight leads· Low collector-emitter saturation voltage· High current ...

PBSS3515VS Data Sheet

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Part Number:
PBSS3515VS
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/28

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Product Details

Description



Features:

· 300 mW total power dissipation
· Very small 1.6 x 1.2 mm ultra thin package
· Self alignment during soldering due to straight leads
· Low collector-emitter saturation voltage
· High current capability
· Improved thermal behaviour due to flat leads
· Replaces two SC75/SC89 packaged low VCEsat transistors on same PCB area
· Reduces required PCB area
· Reduced pick and place costs.


Application

· General purpose switching and muting
· Low frequency driver circuits
· LCD backlighting
· Audio frequency general purpose amplifier applications
· Battery driven equipment (mobile phones, video cameras and hand-held devices).


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
Per transistor unless otherwise specified
VCBO collector-base voltage open emitter - -15 V
VCEO collector-emitter voltage open base - -15 V
VEBO emitter-base voltage open collector - -6 V
IC collector current (DC)   - -500 A
ICM peak collector current limited by Tj max - -1 A
IB base current (DC)   - -100 mA
Ptot total power dissipation Tamb 25 °C; note 1 - 200 mW
Tstg storage temperature   -65 +150 mW
Tj junction temperature   - 150 °C
Tamb operating ambient temperature   -65 +150 °C
Per device
Ptot total power dissipation Tamb 25 °C; note 2 - 300 °C
Note
1. Transistor mounted on an FR4 printed-circuit board.


Description

PNP low VCEsat double transistor PBSS3515VS in a SOT666 plastic package.

NPN complement: PBSS2515VS.


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