PBSS3540E,115, US $ .03-.04 , NXP Semiconductors, PBSS3540E,115 DataSheet download, circuit diagram from SeekIC.com

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PBSS3540E,115: Transistors Bipolar (BJT) LOW VCESAT (BLISS)

PBSS3540E,115 Data Sheet

US $ .03~.04 / Piece | Get Latest Price

Part Number:: PBSS3540E,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2025/12/24

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PBSS2515E T/R evaluate
Transistors Bipolar (BJT) NPN 15V .5A LOW SAT
PBSS2515E,115 evaluate
US $.05 - .07 / Piece

Transistors Bipolar (BJT) NPN 15V .5A LOW SAT
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Features: · Low collector-emitter saturation voltage· High current capabilities· Improved thermal ...

Product Details

Quick Details

Transistor Polarity :	PNP	Collector- Emitter Voltage VCEO Max :	40 V
Emitter- Base Voltage VEBO :	6 V	Maximum DC Collector Current :	0.5 A
Configuration :	Single	Maximum Operating Frequency :	300 MHz
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	SMPAK	Packaging :	Reel

Description

DC Collector/Base Gain hfe Min :
Configuration : Single
Maximum Operating Temperature : + 150 C
Mounting Style : SMD/SMT
Packaging : Reel
Transistor Polarity : PNP
Emitter- Base Voltage VEBO : 6 V
Maximum Operating Frequency : 300 MHz
Maximum DC Collector Current : 0.5 A
Collector- Emitter Voltage VCEO Max : 40 V
Package / Case : SMPAK

Parameters:

Technical/Catalog Information	PBSS3540E,115
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Transistor Type	PNP
Voltage - Collector Emitter Breakdown (Max)	40V
Current - Collector (Ic) (Max)	500mA
Power - Max	250mW
DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 10mA, 2V
Vce Saturation (Max) @ Ib, Ic	50mV @ 500A, 10mA
Frequency - Transition	300MHz
Current - Collector Cutoff (Max)	-
Mounting Type	Surface Mount
Package / Case	EMT3 (SOT-416, SC-75)
Packaging	Tape & Reel (TR)
Drawing Number	568; SOT416; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PBSS3540E,115 PBSS3540E,115

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PBSS3540E,115

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