Transistors Bipolar (BJT) LOW VCESAT (BLISS)
PBSS3540E,115: Transistors Bipolar (BJT) LOW VCESAT (BLISS)
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Transistor Polarity : | PNP | Collector- Emitter Voltage VCEO Max : | 40 V | ||
Emitter- Base Voltage VEBO : | 6 V | Maximum DC Collector Current : | 0.5 A | ||
Configuration : | Single | Maximum Operating Frequency : | 300 MHz | ||
Maximum Operating Temperature : | + 150 C | Mounting Style : | SMD/SMT | ||
Package / Case : | SMPAK | Packaging : | Reel |
Technical/Catalog Information | PBSS3540E,115 |
Vendor | NXP Semiconductors |
Category | Discrete Semiconductor Products |
Transistor Type | PNP |
Voltage - Collector Emitter Breakdown (Max) | 40V |
Current - Collector (Ic) (Max) | 500mA |
Power - Max | 250mW |
DC Current Gain (hFE) (Min) @ Ic, Vce | 200 @ 10mA, 2V |
Vce Saturation (Max) @ Ib, Ic | 50mV @ 500A, 10mA |
Frequency - Transition | 300MHz |
Current - Collector Cutoff (Max) | - |
Mounting Type | Surface Mount |
Package / Case | EMT3 (SOT-416, SC-75) |
Packaging | Tape & Reel (TR) |
Drawing Number | 568; SOT416; ; |
Lead Free Status | Lead Free |
RoHS Status | RoHS Compliant |
Other Names | PBSS3540E,115 PBSS3540E,115 |