Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency leading to less heat generation· Reduced printed-circuit board requirements· Cost effective alternative for MOSFETs in specific applications.Application` Power management DC/D...
PBSS5120T: Features: · Low collector-emitter saturation voltage VCEsat· High collector current capability IC and ICM· High efficiency leading to less heat generation· Reduced printed-circuit board requirements...
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| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | -20 | V |
| VCEO | collector-emitter voltage | open base | - |
-20 |
V |
| VEBO | emitter-base voltage | open collector | - | -5 | V |
| IC | collector current (DC) | - | -1 | A | |
| ICM | average collector current | - | -2 | A | |
| IBM | peak base current | - | -200 | A | |
| Ptot | total power dissipation | Tamb 25 °C;note 1 |
- | 300 | mW |
| Tamb 25 °C;note 2 | - | 480 | mW | ||
| Tstg | storage temperature | -65 | +150 | °C | |
| Tj | junction temperature | - | 150 | °C | |
| Tamb | ambient temperature | -65 | +150 | °C |