Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistors due to enhanced performance.Application· Supply line switching circuits· Battery management applicat...
PBSS5240Y: Features: · Low collector-emitter saturation voltage· High current capability· Improved device reliability due to reduced heat generation· Replacement for SOT89/SOT223 standard packaged transistors ...
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| SYMBOL | PARAMETER | CONDITIONS | MIN. | MAX. | UNIT |
| VCBO | collector-base voltage | open emitter | - | -40 | V |
| VCEO | collector-emitter voltage | open base | - |
-40 |
V |
| VEBO | emitter-base voltage | open collector | - | -5 | V |
| IC | collector current (DC) | - | -2 | A | |
| ICM | average collector current | single peak | - | -3 | A |
| IBM | peak base current | - | -300 | A | |
| Ptot | total power dissipation | Tamb 25 °C;note 1 |
- |
270 |
mW |
| Tamb 25 °C;note 2 | - | 130 | mW | ||
| Tstg | storage temperature | -65 | +150 | °C | |
| Tj | junction temperature | - | 150 | °C | |
| Tamb | ambient temperature | -65 | +150 | °C |