Position: Home  > All Categories> Integrated Circuits (ICs) > PBSS5250T

PBSS5250T

Features: ·Low collector-emitter saturation voltage VCEsat·High collector current capability: IC and ICM·Higher efficiency leading to less heat generation·Reduced printed-circuit board requirements·Cost effective alternative to MOSFETs in specific applications.Application· Power management·CDC/DC ...

product image

PBSS5250T Picture
See larger image
SeekIC No. : 004455669 Detail

PBSS5250T: Features: ·Low collector-emitter saturation voltage VCEsat·High collector current capability: IC and ICM·Higher efficiency leading to less heat generation·Reduced printed-circuit board requirements·...

PBSS5250T Data Sheet

floor Price/Ceiling Price

Get Latest Price
Part Number:
PBSS5250T
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2025/12/28

add to my favourite

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Description



Features:

·Low collector-emitter saturation voltage VCEsat
·High collector current capability: IC  and ICM
·Higher efficiency leading to less heat generation
·Reduced printed-circuit board requirements
·Cost effective alternative to MOSFETs in specific applications.


Application

· Power management
·CDC/DC converter
·CSupply line switchin
·CBattery charge
·CLCD backlightin
· Peripheral drivers
·CDriver in low supply voltage applications (e.g. lamp and LEDs)
·CInductiveloaddriver(e.g.relays,buzzersandmotors


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - -50 V
VCEO collector-emitter voltage open base -

-50

 V
VEBO emitter-base voltage open collector - -5 V
IC collector current (DC)   - -2 A
ICM average collector current single peak - -3 A
IB base current (DC)   - -300 A
Ptot total power dissipation Tamb 25 °C; notes1
 - 300
480		 mW
mW
Tamb 25 °C; notes2
Tj junction temperature   - 150 °C
Tamb ambient temperature   -65 +150 °C
Tstg storage temperature   -65 +150 °C
Notes
1.Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; standard footprint.
2.Device mounted on a FR4 printed-circuit board; single-sided copper; tinplated; mounting pad for collector1cm2 .


Description

PNP BISS transistor PBSS5250T in a SOT23 plastic package offering ultra low VCEsat  and RCEsat  parameters.
 


Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
You may also be interested in :
Capacitors
GRM188R71H103KA01D
GRM21BR71H104KA01L
Circuit Protection
A50QS75-4Y
F-17*77
Tapes, Adhesives
803
AC452-2
Soldering, Desoldering, Rework Products
TGK-900M-B
TGK-900M-1.6D
Boxes, Enclosures, Racks
ACLSN12
ACLJIC
LED Products
LM24P20
KCG057QV1DB-G770
View more