PD1002

PD1002 is a silicon avalanche photodiode(Si-AD)having a light receiving area of 200 um in diameter. Mitsubishi Si-APD PD1002 realizes the P-side incidence method having a deep junction of planar mesa structure, increasing the gain band with area and decreasing the noise generated by the multiplication mechanism. PD1002 has five unique features: the first one is high speed response. The second one is flat frequency charactersitics(cutoff frequency 2GHz). The third one is high gain-bandwidth product. the forth one is low noise indea in multiplication process. the last one is active diameter 200um.

There are some absolute maximum ratings about PD1002. Reverse current(IR) is 200 uA when Topr is not higher than 80. Forward current(IF) is 10 mA when Topr is not higher than 80.Case temperature(Tc) is -40 to +110. Storage temperature(Tstg) is -55 to +150.Otherwise, there are also some electric characteristics about it. Breakdown voltage(V(BR)R) is 100 V min, 150 V typ and 200 V max when ID is 100 uA. Temp.coeff.of V(BR)R is 0.12%/ typ when ID is 100 uA. Total capacitance(Ct) is 1.5 pF typ and 2 PF max when VR is 0.9 V(BR)R. Dark current(ID) is 0.3 nA typ and 1 nA max when Va is 50 V. Responsitivity(R) is 0.4 A/W min and 0.45A?W typ when Va is 50 V and wavelength is 800 nm. Maximum multiplication rate(Mmax) is 1000 typ when IPO is 10 nA and RL is 1 kohms. Cutoff frequency(fc) is 2 GHz typ when M is 100 , RL is 50 ohms,-3dB.

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