Transistors RF MOSFET Power POWER RF Transistor
PD57018-E: Transistors RF MOSFET Power POWER RF Transistor
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| Configuration : | Single | Transistor Polarity : | N-Channel |
| Frequency : | 1 GHz | Gain : | 16.5 dB at 945 MHz |
| Output Power : | 18 W | Drain-Source Breakdown Voltage : | 65 V |
| Continuous Drain Current : | 2.5 A | Gate-Source Breakdown Voltage : | +/- 20 V |
| Maximum Operating Temperature : | + 150 C | Package / Case : | PowerSO-10RF (Formed Lead) |
| Packaging : | Tube |
| Technical/Catalog Information | PD57018-E |
| Vendor | STMicroelectronics |
| Category | Discrete Semiconductor Products |
| Transistor Type | N-Channel |
| Voltage - Rated | 65V |
| Current Rating | 2.5A |
| Package / Case | PowerSO-10 Exposed Bottom Pad |
| Packaging | Tube |
| Drawing Number | * |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PD57018 E PD57018E 497 5305 5 ND 49753055ND 497-5305-5 |