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MFG:Philips  Package Cooled:SMD  D/C:09+  

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Part Number: PDTA114EEF

 

MFG: Philips

Package Cooled: SMD

D/C: 09+

Description: PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plas...


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PDTA114EEF General Description


    PNP resistor-equipped transistor encapsulated in an ultra small SC-89 (SOT490) plastic SMD package. NPN complement: PDTC114EEF.

PDTA114EEF Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter − -50 V
VCEO collector-emitter voltage open base − -50 V
VEBO emitter-base voltage open collector − -10 V
VI input voltage
positive
negative		   −

+10

-40

 V
V
IO output current (DC)   − -100 mA
ICM peak collector current   − -100 mA
Ptot

total power dissipation

 Tamb 25 °C note 1
 −

250

 mW
Tstg storage temperature   −65 +150 °C
Tj junction temperature   − 150 °C
Tamb operating ambient temperature   −65 +150 °C

PDTA114EEF Features

*Power dissipation comparable to SOT23
*Built-in bias resistors R1 and R2 (typ. 10 kΩ each)
*Simplification of circuit design
*Reduces number of components and board space.

PDTA114EEF Typical Application

*Especially suitable for space reduction in interface and driver circuits
*nverter circuit configurations without use of external resistors.

PDTA114EEF datasheet

PDTA114EEF
PDF/DataSheet Download

  • Datasheet: PDTA114EEF
  • File Size: 55996 KB
  • Manufacturer: PHILIPS [Philips Semiconductors]
  • Click here to Download

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