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Part Number: PDTA143TEF

 

 

 

 

Description: PNP resistor equipped transistor in a SOT490 (SC-89) plastic package.


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PDTA143TEF General Description


PNP resistor equipped transistor in a SOT490 (SC-89) plastic package.

PDTA143TEF Maximum Ratings

SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VCBO
collector-base voltage open emitter
-
-50
V
VCEO
collector-emitter voltage open base
-
-50
V
VEBO
emitter-base voltage open collector
-
-10
V
Vi
input voltage
   positive
   negative
-
-
+10
-40
V
V
IO
output current (DC)
-
-100
mA
ICM
peak collector current
-
-100
mA
Ptot
total power dissipation Tamb 25; note 1
-
250
mW
TSTG
Storage temperature
65
+150
Tj
junction temperature
-
150
Tamb
operating ambient temperature
-65
+150
Note
1. For mounting conditions, see "Thermal considerations and footprint design for SOT490 in the SC18
   Data Handbook".

PDTA143TEF Features

· Built-in bias resistors
· Simplification of circuit design
· Reduces number of components and required PCB area.

PDTA143TEF Typical Application

· Especially suitable for space reduction in interface and driver circuits
· Inverter configurations without use of external resistors.

PDTA143TEF Connection Diagram

PDTA143TEF  Connection Diagram

PDTA143TEF datasheet

PDTA143TEF
PDF/DataSheet Download

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