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Part Number: PDTC143Z

 

 

 

 

Description: NPN resistor-equipped transistor (see "Simplified outline,symbol and pinning" for package details).


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PDTC143Z General Description


NPN resistor-equipped transistor (see "Simplified outline,symbol and pinning" for package details).

PDTC143Z Maximum Ratings

Symbol

Parameter

Conditions

Min

Max

Unit

VCBO

collector-base voltage

open emitter

-

−50

V

VCEO

collector-emitter voltage

open base

-

−50

V

VEBO

emitter-base voltage

open collector

-

-5

V

VI

input voltage
positive
negative

 

-

+5
-12

V
V

IO

output current (DC)

 

-

-500

mA

Ptot

total power dissipation
SOT54
SOT23
SOT346
SOT323
SOT883
SOT416
SOT490


Tamb 25 °C;
note 1
note 1
note 1
note 1
note 1
notes 2 and 3
note 1
notes 1 and 2

-
-
-
-
-
-
-
-

500
250
250
200
250
150
250

mW
mW
mW
mW
mW
mW
mW

Tstg

storage temperature

 

-65

   +150

°C

Tj

junction temperature

 

-

     150

°C

Tamb

operating ambient temperature

 

-65

   +150

°C

PDTC143Z Features

• Built-in bias resistors
• Simplified circuit design
• Reduction of component count
• Reduced pick and place costs.

PDTC143Z Typical Application

• General purpose switching and amplification
• Inverter and interface circuits
• Circuit driver.

PDTC143Z Connection Diagram

PDTC143Z  Connection DiagramPDTC143Z  Connection Diagram

PDTC143Z datasheet

PDTC143ZE
PDF/DataSheet Download

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