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Part Number: PDTC144E

 

 

 

 

Description: NPN resistor-equipped transistor (see "Simplified outline, symbol and pinning" for package details).


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PDTC144E General Description


NPN resistor-equipped transistor (see "Simplified outline, symbol and pinning" for package details).

PDTC144E Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VCBO collector-base voltage open emitter - 50 V
VCEO collector-emitter voltage open base - 50 V
VEBO emitter-base voltage open collector - 10 V
VI input voltage
positive
negative
-
-
+40
-10
V
V
IO output current (DC) - 100 mA
ICM peak collector current single pulse;
tp 1 ms
- 100 mA
Ptot total power dissipation

SOT54
SOT23
SOT346
SOT323
SOT416
SOT490
SOT883
Tamb 25
note 1
note 1
note 1
note 1
note 1
notes 1 and 2
notes 2 and 3


-
-
-
-
-
-
-
500
250
250
200
150
250
250
mW
mW
mW
mW
mW
mW
mW
Tstg storage temperature -65 +150
Tj junction temperature - 150
Tamb operating ambient temperature -65 +150

PDTC144E Features

· Built-in bias resistors
· Simplified circuit design
· Reduction of component count
· Reduced pick and place costs.

PDTC144E Typical Application

· General purpose switching and amplification
· Inverter and interface circuits
· Circuit driver.

PDTC144E datasheet

PDTC144EE
PDF/DataSheet Download

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