PDTD113ZS,126

TRANS NPN 50V 500MA SOT54

product image

PDTD113ZS,126 Picture
SeekIC No. : 003437558 Detail

PDTD113ZS,126: TRANS NPN 50V 500MA SOT54

floor Price/Ceiling Price

Part Number:
PDTD113ZS,126
Mfg:
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

SeekIC Buyer Protection PLUS - newly updated for 2013!

  • Escrow Protection.
  • Guaranteed refunds.
  • Secure payments.
  • Learn more >>

Month Sales

268 Transactions

Rating

evaluate  (4.8 stars)

Upload time: 2024/5/4

Payment Methods

All payment methods are secure and covered by SeekIC Buyer Protection PLUS.

Notice: When you place an order, your payment is made to SeekIC and not to your seller. SeekIC only pays the seller after confirming you have received your order. We will also never share your payment details with your seller.
Product Details

Quick Details

Series: - Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased Current - Collector (Ic) (Max): 500mA
Voltage - Collector Emitter Breakdown (Max): 50V Resistor - Base (R1) (Ohms): 1k
Resistor - Emitter Base (R2) (Ohms): 10k DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA Series : EMZC6.8
Current - Collector Cutoff (Max): 500nA Frequency - Transition: -
Power - Max: 500mW Mounting Type: Through Hole
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads Supplier Device Package: TO-92-3    

Description

Series: -
Manufacturer: NXP Semiconductors
Transistor Type: NPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max): 50V
Frequency - Transition: -
Resistor - Emitter Base (R2) (Ohms): 10k
Resistor - Base (R1) (Ohms): 1k
Current - Collector Cutoff (Max): 500nA
Current - Collector (Ic) (Max): 500mA
DC Current Gain (hFE) (Min) @ Ic, Vce: 70 @ 50mA, 5V
Vce Saturation (Max) @ Ib, Ic: 300mV @ 2.5mA, 50mA
Mounting Type: Through Hole
Packaging: Tape & Box (TB)
Package / Case: TO-226-3, TO-92-3 (TO-226AA) Formed Leads
Supplier Device Package: TO-92-3
Power - Max: 500mW


Parameters:

Technical/Catalog InformationPDTD113ZS,126
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Transistor TypeNPN - Pre-Biased
Voltage - Collector Emitter Breakdown (Max)50V
Current - Collector (Ic) (Max)500mA
Power - Max500mW
Resistor - Base (R1) (Ohms)1K
Resistor - Emitter Base (R2) (Ohms)10K
Vce Saturation (Max) @ Ib, Ic300mV @ 2.5mA, 50mA
Current - Collector Cutoff (Max)500nA
DC Current Gain (hFE) (Min) @ Ic, Vce70 @ 50mA, 5V
Frequency - Transition-
Mounting TypeThrough Hole
Package / CaseTO-92-3
PackagingTape & Box (TB)
Drawing Number568; SOT54; ; 5
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PDTD113ZS,126
PDTD113ZS,126



Customers Who Bought This Item Also Bought

Margin,quality,low-cost products with low minimum orders. Secure your online payments with SeekIC Buyer Protection.
Boxes, Enclosures, Racks
Isolators
Undefined Category
Programmers, Development Systems
Potentiometers, Variable Resistors
Connectors, Interconnects
View more