Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed·Simple Drive Requirements· Ease of ParallelingSpecifications Parameter Units ID @ VGS = 10V, TC = 25°C Continuous Drain Current 4.5 A ID @ VGS = 10V, TC = 100°C Continuous Drain Curren...
PD - 90336F: Features: · Repetitive Avalanche Ratings· Dynamic dv/dt Rating· Hermetically Sealed·Simple Drive Requirements· Ease of ParallelingSpecifications Parameter Units ID @ VGS = 10V, TC...
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Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge· Proton Toleran...
Features: · Single Event Effect (SEE) Hardened· Low RDS(on)· Low Total Gate Charge·Proton Tolerant...
Features: · Single Event Effect (SEE) Hardened· Ultra Low RDS(on)· Identical Pre and Post Electric...
|
Parameter |
Units | ||
| ID @ VGS = 10V, TC = 25°C | Continuous Drain Current |
4.5 |
A |
| ID @ VGS = 10V, TC = 100°C | Continuous Drain Current |
3.0 | |
| IDM | Pulsed Drain Current |
18 | |
| PD @TC = 25°C | Power Dissipation |
75 |
W |
| Linear Derating Factor |
0.6 |
W/°C | |
| VGS | Gate-to-Source Voltage |
± 20 |
V |
| EAS | Single Pulse Avalanche Energy |
1.1 |
mJ |
| IAR | Avalanche Current |
4.5 |
A |
| EAR | Repetitive Avalanche Energy |
- |
mJ |
| dv/dt | Peak Diode Recovery dv/dt |
3.5 |
V/ns |
|
TJ |
Operating Junction and Storage Temperature Range |
-55 to + 175 |
°C |
| Soldering Temperature, for 10 seconds |
300 (1.6mm from case ) | ||
| Mounting torque, 6-32 or M3 srew |
11.5 (typical) |
g |