PF5103

Drain Current (Idss at Vgs=0) :
Transistor Polarity : N-Channel
Configuration : Single
Drain Source Voltage VDS : 40 V
Gate-Source Breakdown Voltage : - 40 V
Mounting Style : Through Hole
Package / Case : TO-92
Packaging : Bulk
Continuous Drain Current : 1 mA to 5 mA


Features:

• This device is designed for low level analog switching sample and hold circuits and chopper stabilized amplifiers.
• Sourced from process 51.

Specifications

Symbol	Parameter	Value	Units
VDG	Drain-Gate Voltage	40	V
VGS	Gate-Source Voltage	-40	V
IGF	Forward Gate Current	50	mA
TJ, TSTG	Operating and Storage Junction Temperature Range	-55 ~ 150	°C

* These ratings are limiting values above which the serviceability of any semiconductor device may be impaired.

NOTES:
1) These ratings are based on a maximum junction temperature of 150°C.
2) These are steady state limits. The factory should be consulted on applications involving pulsed or low duty cycle operations.

Parameters:

Technical/Catalog Information	PF5103
Vendor	Fairchild Semiconductor
Category	Discrete Semiconductor Products
Mounting Type	Through Hole
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	-
Current - Drain (Idss) @ Vds (Vgs=0)	10mA @ 15V
Gate to Source Voltage (Vgs Max)	*
Input Capacitance (Ciss) @ Vds	16pF @ 15V
Power - Max	625mW
Packaging	Bulk
Package / Case	TO-92
Voltage - Cutoff (VGS off) @ Id	1.2V @ 1nA
Voltage - Breakdown (V(BR)GSS)	40V
Resistance - RDS(On)	-
Current Drain (Id) - Max	-
Drawing Number	*
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PF5103 PF5103