Features: ·NPN Silicon Microwave Power Transistor·Common Emitter Configuration·Broadband Class AB Operation·Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input and Output Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications Paramete...
PH0814-40: Features: ·NPN Silicon Microwave Power Transistor·Common Emitter Configuration·Broadband Class AB Operation·Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Int...
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| Parameter | Symbol | Rating | Units |
| Collector-Base Voltage | VCEO | 56 | V |
| Collector-Emitter Voltage | VCES | 65 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC | 5.6 | A |
| Total Power Dissipation | P TOT | 175 | W |
| Junction Temperature | TJ | 200 | |
| StorageTemperature | T STG | -55 to +150 | |
| Thermal Resistance | JC | 1.0 | /W |