PH1090-550S

Features: • Designed for Short Pulse IFF Applications• NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency Interdigitated Geometry• Diffused Emitter Ballasting Resistors• Gold Metalization System&...

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SeekIC No. : 004460168 Detail

PH1090-550S: Features: • Designed for Short Pulse IFF Applications• NPN Silicon Microwave Power Transistor• Common Base Configuration• Broadband Class C Operation• High Efficiency I...

floor Price/Ceiling Price

Part Number:
PH1090-550S
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/5/16

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Product Details

Description



Features:

• Designed for Short Pulse IFF Applications
• NPN Silicon Microwave Power Transistor
• Common Base Configuration
• Broadband Class C Operation
• High Efficiency Interdigitated Geometry
• Diffused Emitter Ballasting Resistors
• Gold Metalization System
• Internal Input and Output Impedance Matching
• Hermetic Metal/Ceramic Package



Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 80 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 28 A
Total Power Dissipation @ +25 PTOT 1800 W
Storage Temperature Tstg -65 to +200
Junction Temperature Tj 200



Description

M/A-COM's PH1090-550S is a silicon bipolar NPN transistor intended for use in L-band, 1.2 - 1.4 GHz avionics equipment such as IFF, mode-S and TCAS systems. Designed for common-base, class C broadband pulsed power applications, the PH1090-550S delivers 7.5 dB of gain at 550 watts of output power when operating with short pulse length (10µS), at 1 percent duty cycle. The transistor is housed in a 2-lead, rectangular metal-ceramic flange package, with internal input and output impedance matching networks. Diffused emitter ballast resistors and gold metalization assure ruggedness and long-term reliability.




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