Features: ·NPN Silicon Microwave Power Transisror·Common Base Configuration·Broadband Class C Operation·High Effkiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization System·Internal Input Impedance Matching·Hermetic Metal/Ceramic PackageSpecifications Paramete...
PH1214-IOOEL: Features: ·NPN Silicon Microwave Power Transisror·Common Base Configuration·Broadband Class C Operation·High Effkiency Interdigitated Geometry·Diffused Emitter Ballasting Resistors·Gold Metalization...
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| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 75 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current (Peak) | IC | 14.1 | A |
| Total Power Dissipation | PD | 214 | W |
| Junction Temperature | Tj | 200 | |
| Storage Temperature | TSTG | -65 to +200 |