Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Class C Operation·Interdigitated Geometry·Gold Metalization System·Hermetic Metal/Ceramic Package ·Diffused Emitter Ballasting Resistors·Internal Input and Output Impedance MatchingSpecifications Parameter Symbol Ra...
PH2323-14: Features: ·NPN Silicon Microwave Power Transistor·Common Base Configuration·Class C Operation·Interdigitated Geometry·Gold Metalization System·Hermetic Metal/Ceramic Package ·Diffused Emitter Ballas...
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| Parameter | Symbol | Rating | Units |
| Collector-Emitter Voltage | VCES | 60 | V |
| Emitter-Base Voltage | VEBO | 3.0 | V |
| Collector Current | IC | 0.8 | A |
| Power Dissipation | PD | 25 | W |
| Junction Temperature | Tj | 200 | |
| Storage Temperature | Tstg | -65 to +200 | |
| Thermal Resistance |
JC | 4.5 | /W |