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PH2731-20M

Features: `NPN Silicon Microwave Power Transistor`Common Base Configuration`Broadband Class C Operation`High Efficiency Interdigicated Geometry`Diffused Emitter Ballasting Resistors`Gold Metalization System`Internal Input and Output Impedance Matching`Hermetic'MetaUCeramic PackageSpecifications ...

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PH2731-20M: Features: `NPN Silicon Microwave Power Transistor`Common Base Configuration`Broadband Class C Operation`High Efficiency Interdigicated Geometry`Diffused Emitter Ballasting Resistors`Gold Metalizatio...

PH2731-20M Data Sheet

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Part Number:
PH2731-20M
Supply Ability:
5000

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  • 1~5000
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  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2025/12/27

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Product Details

Description



Features:

`NPN Silicon Microwave Power Transistor
`Common Base Configuration
`Broadband Class C Operation
`High Efficiency Interdigicated Geometry
`Diffused Emitter Ballasting Resistors
`Gold Metalization System
`Internal Input and Output Impedance Matching
`Hermetic'MetaUCeramic Package


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage VCES 65 V
Emitter-Base Voltage VEBO 3.0 V
Collector Current (Peak) IC 1.85 A
Total Power Dissipation PTOT 70 W
Junction Temperature Tj 200
Storage Temperature
 Tstg -65 to +200



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