PH3120L,115, US $ .8-.98 , NXP Semiconductors, PH3120L,115 DataSheet download, circuit diagram from SeekIC.com

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PH3120L,115: MOSFET N-CH TRENCH 20V

PH3120L,115 Data Sheet

US $ .8~.98 / Piece | Get Latest Price

Part Number:: PH3120L,115
Mfg:: NXP Semiconductors
Supply Ability:: 5000

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Upload time: 2024/4/18

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Product Details

Quick Details

Transistor Polarity :	N-Channel	Drain-Source Breakdown Voltage :	20 V
Gate-Source Breakdown Voltage :	+/- 20 V	Continuous Drain Current :	100 A
Resistance Drain-Source RDS (on) :	2.25 mOhms	Configuration :	Single
Maximum Operating Temperature :	+ 150 C	Mounting Style :	SMD/SMT
Package / Case :	LFPAK	Packaging :	Reel

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : LFPAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 2.25 mOhms

Parameters:

Technical/Catalog Information	PH3120L,115
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	20V
Current - Continuous Drain (Id) @ 25° C	100A
Rds On (Max) @ Id, Vgs	2.65 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	4457pF @ 10V
Power - Max	62.5W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	48.5nC @ 4.5V
Package / Case	LFPak-4
FET Feature	Standard
Drawing Number	568; SOT669; ; 4
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PH3120L,115 PH3120L,115 568 2178 1 ND 56821781ND 568-2178-1

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PH3120L,115

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