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PH3120L,115

MOSFET N-CH TRENCH 20V

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SeekIC No. : 00151810 Detail

PH3120L,115: MOSFET N-CH TRENCH 20V

PH3120L,115 Data Sheet

floor Price/Ceiling Price

US $ .8~.98 / Piece | Get Latest Price
Part Number:
PH3120L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 0~1
  • 1~25
  • 25~100
  • 100~250
  • Unit Price
  • $.98
  • $.89
  • $.84
  • $.8
  • Processing time
  • 15 Days
  • 15 Days
  • 15 Days
  • 15 Days
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Total Cost: $ 0.00

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Upload time: 2025/12/7

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 20 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 2.25 mOhms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : LFPAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : LFPAK
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 20 V
Continuous Drain Current : 100 A
Resistance Drain-Source RDS (on) : 2.25 mOhms


Parameters:

Technical/Catalog InformationPH3120L,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)20V
Current - Continuous Drain (Id) @ 25° C100A
Rds On (Max) @ Id, Vgs2.65 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 4457pF @ 10V
Power - Max62.5W
PackagingCut Tape (CT)
Gate Charge (Qg) @ Vgs48.5nC @ 4.5V
Package / CaseLFPak-4
FET FeatureStandard
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH3120L,115
PH3120L,115
568 2178 1 ND
56821781ND
568-2178-1



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