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PH3855L,115

MOSFET N-CH TRENCH 55V

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SeekIC No. : 00162272 Detail

PH3855L,115: MOSFET N-CH TRENCH 55V

PH3855L,115 Data Sheet

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Part Number:
PH3855L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

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  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : +/- 15 V Continuous Drain Current : 24 A
Resistance Drain-Source RDS (on) : 0.036 Ohms Configuration : Single Triple Source
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : SOT-669 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Gate-Source Breakdown Voltage : +/- 15 V
Drain-Source Breakdown Voltage : 55 V
Resistance Drain-Source RDS (on) : 0.036 Ohms
Configuration : Single Triple Source
Continuous Drain Current : 24 A
Package / Case : SOT-669


Parameters:

Technical/Catalog InformationPH3855L,115
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C24A
Rds On (Max) @ Id, Vgs36 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 765pF @ 25V
Power - Max50W
PackagingTape & Reel (TR)
Gate Charge (Qg) @ Vgs11.7nC @ 5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH3855L,115
PH3855L,115



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