PH4530L,115

MOSFET TAPE13 PWR-MOS

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PH4530L,115 Picture
SeekIC No. : 00161427 Detail

PH4530L,115: MOSFET TAPE13 PWR-MOS

floor Price/Ceiling Price

Part Number:
PH4530L,115
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/22

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 30 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.057 Ohms Configuration : Single
Maximum Operating Temperature : + 150 C Mounting Style : SMD/SMT
Package / Case : SOT-669 Packaging : Reel    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Mounting Style : SMD/SMT
Packaging : Reel
Drain-Source Breakdown Voltage : 30 V
Maximum Operating Temperature : + 150 C
Continuous Drain Current : 80 A
Resistance Drain-Source RDS (on) : 0.057 Ohms
Package / Case : SOT-669


Parameters:

Technical/Catalog InformationPH4530L,115
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)30V
Current - Continuous Drain (Id) @ 25° C80A
Rds On (Max) @ Id, Vgs5.7 mOhm @ 15A, 10V
Input Capacitance (Ciss) @ Vds 1972pF @ 10V
Power - Max62.5W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs23.5nC @ 5V
Package / CaseLFPak-4
FET FeatureLogic Level Gate
Drawing Number568; SOT669; ; 4
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PH4530L,115
PH4530L,115
568 2179 6 ND
56821796ND
568-2179-6



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