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D/C:700
Part Number: PH955L
D/C: 700
Description: Logic level N-channel enhancement mode Field Effect Transistor (FET) in a plastic package ...
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PH955L
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Suppliers
DataSheet
General Description
PH955L General Description
Logic level N-channel enhancement mode Field Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.
PH955L Maximum Ratings
| Symbol | Parameter | Conditions | Min | Max | Unit |
| VDS | drain-source voltage (DC) | 25 Tj 150 | - | 55 | V |
| VDGR | drain-gate voltage (DC) | 25 Tj 150 ; RGS = 20 k | - | 55 | V |
| VGS | gate-source voltage | - | ±20 | V | |
| ID | drain current (DC) | Tmb = 25 ; VGS = 5 V; Figure 2 and 3 | - | 62.5 | A |
| Tmb = 100 ; VGS = 5 V; Figure 2 | - | 43.7 | A | ||
| IDM | peak drain current | Tmb = 25 ; pulsed; tp 10 s; Figure 3 | - | 187 | A |
| Ptot | total power dissipation | Tmb = 25 ; Figure 1 | - | 62.5 | W |
| Tstg | storage temperature | -55 | +150 | ||
| Tj | junction temperature | -55 | +150 | ||
| Source-drain diode | |||||
| IS | source (diode forward) current (DC) | Tmb = 25 | - | 52 | A |
| ISM | peak source (diode forward) current | Tmb = 25 ; pulsed; tp 10 s | - | 156 | A |
| Avalanche ruggedness | |||||
| EDS(AL)S | non-repetitive drain-source avalanche energy |
unclamped inductive load; ID = 44 A; tp = 0.1 ms; VDD 55 V; RGS = 50 ; VGS = 5 V; starting at Tj = 25 |
- | 195 | mJ |
| EDS(AL)R | repetitive drain-source avalanche energy |
unclamped inductive load; ID = 44 A; tp = 0.1 ms; VDD 55 V; RGS = 50 ; VGS = 5 V; starting at Tj = 25 |
- | 2 | mJ |
PH955L Features
·Logic level threshold
·Very low on-state resistance
·Very low on-state resistance
PH955L Typical Application
·DC-to-DC converters
·General purpose power switching
·Motors, lamps and solenoids
·Portable appliances
·General purpose power switching
·Motors, lamps and solenoids
·Portable appliances
PH955L Connection Diagram
PH955L
PDF/DataSheet Download
- Datasheet: PH955L
- File Size: 89927 KB
- Manufacturer: PHILIPS [Philips Semiconductors]
- Click here to Download
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