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PH955L

Features: ·Logic level threshold·Very low on-state resistanceApplication·DC-to-DC converters·General purpose power switching·Motors, lamps and solenoids·Portable appliancesPinoutSpecifications Symbol Parameter Conditions Min Max Unit VDS drain-source voltage (DC) 25 Tj 150 - 5...

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SeekIC No. : 004460297 Detail

PH955L: Features: ·Logic level threshold·Very low on-state resistanceApplication·DC-to-DC converters·General purpose power switching·Motors, lamps and solenoids·Portable appliancesPinoutSpecifications ...

PH955L Data Sheet

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Part Number:
PH955L
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

·Logic level threshold
·Very low on-state resistance


Application

·DC-to-DC converters
·General purpose power switching
·Motors, lamps and solenoids
·Portable appliances


Pinout

Connection Diagram


Specifications

Symbol Parameter Conditions Min Max Unit
VDS drain-source voltage (DC) 25 Tj 150 - 55 V
VDGR drain-gate voltage (DC) 25 Tj 150 ; RGS = 20 k - 55 V
VGS gate-source voltage   - ±20 V
ID drain current (DC) Tmb = 25 ; VGS = 5 V; Figure 2 and 3 - 62.5 A
Tmb = 100 ; VGS = 5 V; Figure 2 - 43.7 A
IDM peak drain current Tmb = 25 ; pulsed; tp 10 s; Figure 3 - 187 A
Ptot total power dissipation Tmb = 25 ; Figure 1 - 62.5 W
Tstg storage temperature   -55 +150
Tj junction temperature   -55 +150
Source-drain diode
IS source (diode forward) current (DC) Tmb = 25 - 52 A
ISM peak source (diode forward) current Tmb = 25 ; pulsed; tp 10 s - 156 A
Avalanche ruggedness
EDS(AL)S non-repetitive drain-source
avalanche energy		 unclamped inductive load; ID = 44 A;
tp = 0.1 ms; VDD 55 V; RGS = 50 ;
VGS = 5 V; starting at Tj = 25 		- 195 mJ
EDS(AL)R repetitive drain-source avalanche
energy		 unclamped inductive load; ID = 44 A;
tp = 0.1 ms; VDD 55 V; RGS = 50 ;
VGS = 5 V; starting at Tj = 25 		- 2 mJ



Description

PH955L, Logic level N-channel enhancement mode Field Effect Transistor (FET) in a plastic package using TrenchMOS™ technology.




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