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PHA2731-190M

Features: • Input and Output matched to 50Ω• RC bias circuit included• Dual NPN Silicon class C power transistors• Soft substrate r = 10.5• Hermetic Package• Nickel plated copper flangeSpecifications Parameter Symbol Rating Units Collector-Emitt...

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PHA2731-190M: Features: • Input and Output matched to 50Ω• RC bias circuit included• Dual NPN Silicon class C power transistors• Soft substrate r = 10.5• Hermetic Package•...

PHA2731-190M Data Sheet

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Part Number:
PHA2731-190M
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/26

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Product Details

Description



Features:

• Input and Output matched to 50Ω
• RC bias circuit included
• Dual NPN Silicon class C power transistors
• Soft substrate r = 10.5
• Hermetic Package
• Nickel plated copper flange


Specifications

Parameter Symbol Rating Units
Collector-Emitter Voltage



 VCES




 65




 V



Emitter-Base Voltage
 VEBO 3.0 V
Junction Temperature Tj 200 °C
Thermal Resistance JC 0.35 °C/W
Operating Flange Temp. TC -10 to +100 °C
Storage Temperature TSTG -20 to +125 °C



Description

M/A-COM's PHA2731-190M is a Class C microwave power amplifier module specifically designed for S-Band radar pulsed power applications where high efficiency and saturated power are required. The PHA2731-190M module incorporates two in-phase combined common base hybrid power transistors and is input and output matched to 50 Ω for unparalleled ease of PA design. The thick copper base and ceramic transistor packaging technology provides for excellent thermal management, which when combined with M/A-COM's mature transistor fabrication technology results in the highest reliability available.




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