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PHB110NQ06LT,118

MOSFET N-CH TRENCH 55V

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SeekIC No. : 00161618 Detail

PHB110NQ06LT,118: MOSFET N-CH TRENCH 55V

PHB110NQ06LT,118 Data Sheet

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Part Number:
PHB110NQ06LT,118
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 55 V
Gate-Source Breakdown Voltage : 15 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 7 mOhms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : SMD/SMT
Package / Case : D2PAK Packaging : Reel    

Description

Transistor Polarity : N-Channel
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : SMD/SMT
Packaging : Reel
Package / Case : D2PAK
Resistance Drain-Source RDS (on) : 7 mOhms
Drain-Source Breakdown Voltage : 55 V
Continuous Drain Current : 75 A
Gate-Source Breakdown Voltage : 15 V


Parameters:

Technical/Catalog InformationPHB110NQ06LT,118
VendorNXP Semiconductors (VA)
CategoryDiscrete Semiconductor Products
Mounting TypeSurface Mount
FET PolarityN-Channel
Drain to Source Voltage (Vdss)55V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs7 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 3960pF @ 25V
Power - Max200W
PackagingDigi-Reel?
Gate Charge (Qg) @ Vgs45nC @ 5V
Package / CaseD²Pak, SMD-220, TO-263 (2 leads + tab)
FET FeatureLogic Level Gate
Drawing Number568; SOT404; ;
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHB110NQ06LT,118
PHB110NQ06LT,118
568 2183 6 ND
56821836ND
568-2183-6



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