PHB129NQ04LT,118

FET Type: MOSFET N-Channel, Metal Oxide
Transistor Type: -
Current - Collector (Ic) (Max): -
FET Feature: Logic Level Gate
Voltage - Collector Emitter Breakdown (Max): -
Vce Saturation (Max) @ Ib, Ic: -
Current - Collector Cutoff (Max): -
DC Current Gain (hFE) (Min) @ Ic, Vce: -
Frequency - Transition: -
Mounting Type: Surface Mount
Drain to Source Voltage (Vdss): 40V
Package / Case: TO-263-3, D²Pak (2 Leads + Tab), TO-263AB
Packaging: Cut Tape (CT)
Supplier Device Package: D2PAK
Series: TrenchMOS™
Manufacturer: NXP Semiconductors
Vgs(th) (Max) @ Id: 2V @ 1mA
Current - Continuous Drain (Id) @ 25° C: 75A
Power - Max: 200W
Rds On (Max) @ Id, Vgs: 5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds: 3965pF @ 25V
Gate Charge (Qg) @ Vgs: 44.2nC @ 5V


Parameters:

Technical/Catalog Information	PHB129NQ04LT,118
Vendor	NXP Semiconductors (VA)
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	40V
Current - Continuous Drain (Id) @ 25° C	75A
Rds On (Max) @ Id, Vgs	5 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds	3965pF @ 25V
Power - Max	200W
Packaging	Cut Tape (CT)
Gate Charge (Qg) @ Vgs	44.2nC @ 5V
Package / Case	D²Pak, SMD-220, TO-263 (2 leads + tab)
FET Feature	Logic Level Gate
Drawing Number	568; SOT404; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHB129NQ04LT,118 PHB129NQ04LT,118 568 2184 1 ND 56821841ND 568-2184-1