PHP160NQ08T,127

MOSFET TRENCH-75

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PHP160NQ08T,127 Picture
SeekIC No. : 00160922 Detail

PHP160NQ08T,127: MOSFET TRENCH-75

floor Price/Ceiling Price

Part Number:
PHP160NQ08T,127
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/3/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 75 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 75 A
Resistance Drain-Source RDS (on) : 0.0056 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Tube    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Packaging : Tube
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 75 V
Resistance Drain-Source RDS (on) : 0.0056 Ohms
Continuous Drain Current : 75 A


Parameters:

Technical/Catalog InformationPHP160NQ08T,127
VendorNXP Semiconductors
CategoryDiscrete Semiconductor Products
Mounting TypeThrough Hole
FET PolarityN-Channel
Drain to Source Voltage (Vdss)75V
Current - Continuous Drain (Id) @ 25° C75A
Rds On (Max) @ Id, Vgs5.6 mOhm @ 25A, 10V
Input Capacitance (Ciss) @ Vds 5585pF @ 25V
Power - Max300W
PackagingTube
Gate Charge (Qg) @ Vgs91nC @ 10V
Package / CaseTO-220AB-3
FET FeatureStandard
Drawing Number568; SOT78; ; 3
Lead Free StatusLead Free
RoHS StatusRoHS Compliant
Other Names PHP160NQ08T,127
PHP160NQ08T,127



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