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PHP30NQ15T

MOSFET RAIL PWR-MOS

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SeekIC No. : 00162246 Detail

PHP30NQ15T: MOSFET RAIL PWR-MOS

PHP30NQ15T Data Sheet

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Part Number:
PHP30NQ15T
Mfg:
NXP Semiconductors
Supply Ability:
5000

Price Break

  • Qty
  • 1~5000
  • Unit Price
  • Negotiable
  • Processing time
  • 15 Days
Total Cost: $ 0.00

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Upload time: 2024/4/28

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Product Details

Quick Details

Transistor Polarity : N-Channel Drain-Source Breakdown Voltage : 150 V
Gate-Source Breakdown Voltage : +/- 20 V Continuous Drain Current : 29 A
Resistance Drain-Source RDS (on) : 0.063 Ohms Configuration : Single
Maximum Operating Temperature : + 175 C Mounting Style : Through Hole
Package / Case : TO-220AB Packaging : Rail    

Description

Transistor Polarity : N-Channel
Gate-Source Breakdown Voltage : +/- 20 V
Configuration : Single
Maximum Operating Temperature : + 175 C
Mounting Style : Through Hole
Package / Case : TO-220AB
Drain-Source Breakdown Voltage : 150 V
Resistance Drain-Source RDS (on) : 0.063 Ohms
Continuous Drain Current : 29 A
Packaging : Rail


Features:

• 'Trench' technology
• Very low on-state resistance
• Fast switching
• Low thermal resistance


Pinout

Connection Diagram


Specifications

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDSS
VDGR
VGS

ID
IDM
Ptot
Tj, Tstg		 Drain-source voltage
Drain-gate voltage
Gate-source voltage

Continuous drain current
Pulsed drain current
Total power dissipation
Operating junction and
storage temperature		 Tj = 25 to 175
Tj = 25 to 175; RGS = 20 k

Tmb = 25 ;VGS = 10 V
Tmb = 100 ;VGS = 10 V
Tmb = 25
Tmb = 25 		-
-
-
-
-
-
-
- 55		 150
150
± 20
29
20
116
150
175		 V
V
V
A
A
A
W



Description

PHP30NQ15T N-channel enhancement mode field-effect power transistor in a plastic envelope using 'trench' technology. The device has very low on-state resistance. PHP30NQ15T is intended for use in dc to dc converters and general purpose switching applications.




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