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| Transistor Polarity : | N-Channel | Drain-Source Breakdown Voltage : | 200 V | ||
| Gate-Source Breakdown Voltage : | +/- 20 V | Continuous Drain Current : | 32.7 A | ||
| Resistance Drain-Source RDS (on) : | 0.077 Ohms | Configuration : | Single | ||
| Maximum Operating Temperature : | + 175 C | Mounting Style : | Through Hole | ||
| Package / Case : | TO-220AB | Packaging : | Tube |
| Technical/Catalog Information | PHP33NQ20T,127 |
| Vendor | NXP Semiconductors |
| Category | Discrete Semiconductor Products |
| Mounting Type | Through Hole |
| FET Polarity | N-Channel |
| Drain to Source Voltage (Vdss) | 200V |
| Current - Continuous Drain (Id) @ 25° C | 32.7A |
| Rds On (Max) @ Id, Vgs | 77 mOhm @ 15A, 10V |
| Input Capacitance (Ciss) @ Vds | 1870pF @ 25V |
| Power - Max | 230W |
| Packaging | Tube |
| Gate Charge (Qg) @ Vgs | 32.2nC @ 10V |
| Package / Case | TO-220AB-3 |
| FET Feature | Logic Level Gate |
| Drawing Number | 568; SOT78; ; 3 |
| Lead Free Status | Lead Free |
| RoHS Status | RoHS Compliant |
| Other Names | PHP33NQ20T,127 PHP33NQ20T,127 |