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MFG:PHILIPS  Package Cooled:03+  D/C:220  

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Part Number: PHP36N06E

 

MFG: PHILIPS

Package Cooled: 03+

D/C: 220

Description: N-channel enhancement mode field-effect power transistor in a plastic envelope. The device is inte...


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PHP36N06E General Description


N-channel enhancement mode field-effect power transistor in a plastic envelope.
The device is intended for use in automotive applications, Switched Mode Power Supplies (SMPS), motor control, welding, DC/DC and AC/DC converters, and in general resistance purpose switching applications.

PHP36N06E Maximum Ratings

SYMBOL
 PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
VDS
 Drain-source voltage
-
-
60
V
VDGR
 Drain-gate voltage
RGS = 20 W
-
60
V
±VGS
 Gate-source voltage
-
-
30
V
ID
 Drain current (DC)
Tmb = 25
-
41
A
ID
 Drain current (DC)
Tmb = 25
-
29
A
IDM
 Drain current (pulse peak value)
Tmb = 100
-
164
A
Ptot
 Total power dissipation
Tmb = 25
-
125
W
Tstg
 Storage temperature
-
-55
175
Tj
 Junction temperature
-
-
175

PHP36N06E Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PHP36N06E datasheet

PHP36N06E
PDF/DataSheet Download

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