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MFG:PHILIPS  Package Cooled:TO-220  D/C:02+  

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Part Number: PHT6N06LT

 

MFG: PHILIPS

Package Cooled: TO-220

D/C: 02+

Description: N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable fo...


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PHT6N06LT General Description


N-channel enhancement mode logic level field-effect power transistor in a plastic envelope suitable for surface mounting. The device features very low on-state resistance and has integral zener diodes giving ESDprotection. It is intended for use in DC-DC converters and general purpose switching
applications.

PHT6N06LT Maximum Ratings

SYMBOL PARAMETER CONDITIONS MIN. MAX. UNIT
VDS Drain-source voltage - - 55 V
VDGR Drain-gate voltage RGS = 20 k - 55 V
VGS Gate-source voltage - - ±13 V
ID Drain current (DC) Tsp = 25 °C Tamb = 25 °C - 5.5 2.5 A A
ID Drain current (DC) Tsp = 100 °C Tamb = 100°C - 3.8 1.75 A A
IDM Drain current (pulse peak value) Tsp = 25 °C Tamb = 25 °C - 22 10 A A
Ptot Total power dissipation Tsp = 25 °C Tamb = 25 °C - 8.3 1.8 W W
Tstg, Tj Storage & operating temperature - -55 150 °C

PHT6N06LT Typical Application

These products are not designed for use in life support appliances, devices or systems where malfunction of these products can be reasonably expected to result in personal injury. Philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Philips for any damages resulting from such improper use or sale.

PHT6N06LT datasheet

PHT6N06LT
PDF/DataSheet Download

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