PHT8N06LT,135

Transistor Polarity : N-Channel
Mounting Style : SMD/SMT
Packaging : Reel
Maximum Operating Temperature : + 150 C
Drain-Source Breakdown Voltage : 55 V
Package / Case : SOT-223
Continuous Drain Current : 3.5 A
Configuration : Single Dual Drain
Resistance Drain-Source RDS (on) : 80 mOhms at 5 V
Gate-Source Breakdown Voltage : +/- 13 V


Parameters:

Technical/Catalog Information	PHT8N06LT,135
Vendor	NXP Semiconductors
Category	Discrete Semiconductor Products
Mounting Type	Surface Mount
FET Polarity	N-Channel
Drain to Source Voltage (Vdss)	55V
Current - Continuous Drain (Id) @ 25° C	7.5A
Rds On (Max) @ Id, Vgs	80 mOhm @ 5A, 5V
Input Capacitance (Ciss) @ Vds	650pF @ 25V
Power - Max	1.8W
Packaging	Tape & Reel (TR)
Gate Charge (Qg) @ Vgs	11.2nC @ 5V
Package / Case	SOT-223, SC-73, TO-261 (3 Leads + Tab)
FET Feature	Logic Level Gate
Drawing Number	568; SOT223; ;
Lead Free Status	Lead Free
RoHS Status	RoHS Compliant
Other Names	PHT8N06LT,135 PHT8N06LT,135